Coupled effects of ion beam chemistry and morphology on directed self-assembly of epitaxial semiconductor nanostructures

Nanotechnology

Volumn 22, Issue 7, 2011, Pages

  Graham, J F ^a   Kell, C D ^a   Floro, J A ^a   Hull, R ^b  

^a University of Virginia   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL EFFECT; COMPLEX PROCESSES; COUPLED EFFECT; DIRECTED SELF-ASSEMBLY; EPITAXIAL NANOSTRUCTURES; FOCUSED-ION-BEAM SYSTEM; ION DOSE; ION SPECIES; NEAR SURFACE REGIONS; SEMICONDUCTOR NANOSTRUCTURES; SI SUBSTRATES; TEMPLATED; TEMPLATING SPECIES;

BEAM PLASMA INTERACTIONS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; ION BEAMS; ION BOMBARDMENT; MORPHOLOGY; NANOSTRUCTURES; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SILICON;

IONS;

EID: 79251570246     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/7/075301     Document Type: Article

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