Growth of GaN nanotubes by halide vapor phase epitaxy

Nanotechnology

Volumn 22, Issue 8, 2011, Pages

  Hemmingsson, Carl ^a   Pozina, Galia ^a   Khromov, Sergey ^a   Monemar, Bo ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH OF GAN; HALIDE VAPOR PHASE EPITAXY; HIGH DENSITY; INNER DIAMETERS; LOW TEMPERATURE GROWTH;

ALUMINUM; DROP FORMATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; VAPOR PHASE EPITAXY; VAPORS;

NANOTUBES;

EID: 79251534390     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/8/085602     Document Type: Article

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