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Volumn 81, Issue 4, 2010, Pages

Semiconductor-homojunction induction in single-crystal GaN nanostructures under a transverse electric field: Ab initio calculations

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EID: 77954821162     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.041312     Document Type: Article
Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.