메뉴 건너뛰기




Volumn 310, Issue 5, 2008, Pages 906-910

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor

Author keywords

A1. Fluid flows; A1. Growth models; A1. Mass transfer; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

FLOW OF FLUIDS; MASS TRANSFER; NUMERICAL METHODS; OPTIMIZATION; VAPOR PHASE EPITAXY;

EID: 39149140753     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.062     Document Type: Article
Times cited : (16)

References (17)
  • 2
    • 0003453296 scopus 로고    scopus 로고
    • Nakamura S., and Fasol G. (Eds), Springer, Berlin
    • In: Nakamura S., and Fasol G. (Eds). The Blue Laser Diode (1997), Springer, Berlin
    • (1997) The Blue Laser Diode
  • 16
    • 77956691819 scopus 로고    scopus 로고
    • Willardson R.K., and Weber E.R. (Eds), Academic Press, New York
    • Gil B. In: Willardson R.K., and Weber E.R. (Eds). Gallium Nitride II, Semiconductors and Semimetals vol. 57 (1999), Academic Press, New York 209-274
    • (1999) Gallium Nitride II, Semiconductors and Semimetals , vol.57 , pp. 209-274
    • Gil, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.