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Volumn 310, Issue 5, 2008, Pages 906-910
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Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
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Author keywords
A1. Fluid flows; A1. Growth models; A1. Mass transfer; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B2. Semiconducting III V materials
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Indexed keywords
FLOW OF FLUIDS;
MASS TRANSFER;
NUMERICAL METHODS;
OPTIMIZATION;
VAPOR PHASE EPITAXY;
GROWTH FROM VAPOR;
GROWTH MODELS;
HYDRIDE VAPOR PHASE EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 39149140753
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2007.11.062 Document Type: Article |
Times cited : (16)
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References (17)
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