Surface potential mapping of SAM-functionalized organic semiconductors by kelvin probe force microscopy

Advanced Materials

Volumn 23, Issue 4, 2011, Pages 502-507

  Ellison, David J ^a   Lee, Bumsu ^b   Podzorov, V ^b   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

(Organic) Field Effect Transistors; Charge Transport; Dielectrics; Self assembly; Structure Property Relationships

Indexed keywords

CARRIER DENSITY; CHARGE TRANSPORT; DIELECTRICS; FUNCTIONALIZED; INTERFACE DIPOLE; INTERFACIAL CHARGE; KELVIN PROBE FORCE MICROSCOPY; ORGANIC SEMICONDUCTOR; RUBRENE CRYSTALS; RUBRENES; STRUCTURE PROPERTY RELATIONSHIPS; TOPOGRAPHIC INFORMATION;

CHARGE TRANSFER; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; PROBES; SELF ASSEMBLY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE POTENTIAL; SURFACE PROPERTIES;

ORGANIC FIELD EFFECT TRANSISTORS;

NAPHTHACENE DERIVATIVE; RUBRENE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CRYSTALLIZATION; METHODOLOGY; SEMICONDUCTOR; SURFACE PROPERTY;

CRYSTALLIZATION; MICROSCOPY, ATOMIC FORCE; NAPHTHACENES; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 79251532082     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201003122     Document Type: Article

References (31)

1. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson, V. Podzorov, Nat. Mater. 2008, 7, 84.
2. V. Podzorov, V. M. Pudalov, M. E. Gershenson, Appl. Phys. Lett. 2004, 85, 6039.
3. V. Podzorov, V. M. Pudalov, M. E. Gershenson, Appl. Phys. Lett. 2005, 87, 093505.
4. I. H. Campbell, S. Rubin, T. A. Zawodzinski, J. D. Kress, R. L. Martin, D. L. Smith, N. N. Barashkov, J. P. Ferraris, Phys. Rev. B, 1996, 54, R14321.
5. G. Ashkenasy, D. Cahen, R. Cohen, A. Shanzer, A. Vilan, Acc. Chem. Res., 2002, 35, 121.
6. Y. Martin, D. W. Abraham, H. K. Wickramasinghe, Appl. Phys. Lett., 1988, 52, 1103.
7. M. Nonnenmacher, M. P. O'Boyle, H. K. Wickramasinghe, Appl. Phys. Lett., 1991, 58, 2921.
8. J. M. R. Weaver, D. W. Abraham, J. Vac. Sci. Technol. B, 1991, 9, 1559.
9. H. O. Jacobs, H. F. Knapp, S. Mueller, A. Stemmer, Ultramicroscopy, 1997, 69, 39.
10. M. Fujihira, Annual Review of Materials Science, 1999, 29, 353.
11. L. Tsetseris, S. T. Pantelides, Phys. Rev. B, 2008, 78, 115205.
12. L. Tsetseris, S. T. Pantelides, Organic Electronics, 2009, 10, 333.
13. B. Lee, T. Choi, S.-W. Cheon, V. Podzorov, Adv. Funct. Mater., 2009, 19, 3726.
14. D. Devaprakasam, S. Sampath, S. K. Biswas, Langmuir, 2004, 20, 1329.
15. V. Kalihari, D. J. Ellison, G. Haugstad, C. D. Frisbie, Adv Mater, 2009, 21, 3092.
16. J. Alexander, S. Magonov, M. Moeller, J. Vac. Sci. Technol. B, 2009, 27, 903.
17. H. Sugimura, K. Hayashi, N. Saito, O. Takai, N. Nakagiri, Jpn. J. Appl. Phys., 2001, 40, 4373.
18. R. J. Demchak, T. Fort, J. Colloid Interface Sci., 1974, 46, 191.
19. D. M. Taylor, Adv. Colloid Interface Sci., 2000, 87, 183.
20. A. E. Abed, M. Fauré, E. Pouzet, O. Abillon, Phys Rev E., 2002, 65, 051603.
21. Chem3D Ultra by CambridgeSoft with a molecular orbital quantum computation package (MOPAC, James J. P. Stewart, Stewart Computational Chemistry, Colorado Springs, CO, USA, HTTP://OpenMOPAC.net (2008)).
22. A. Natan, L. Kronik, H. Haick, R. T. Tung, Adv. Mater. 2007, 19, 4103.
23. D. Cahen, R. Naaman, Z. Vager, Adv. Funct. Mater. 2005, 15, 1571.
24. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, M. E. Gershenson, Phys. Rev. Lett. 2004, 93, 086602.
25. R. Shikler, N. Fried, T. Meoded, Y. Rosenwaks, Phys.Rev.B 2000, 61, 11041.
26. H. Sugimura, Y. Ishida, K. Hayashi, O. Takai, N. Nakagiri, Appl. Phys. Lett. 2002, 80, 1459.
27. A. Kikukawa, S. Hosaka, R. Imura, Appl. Phys. Lett. 1995, 66, 3510.
28. W. L. Kalb, S. Haas, C. Krellner, T. Mathis, B. Batlogg, Phys. Rev. B 2010, 81, 155315.
29. H. Ding, Y. Gao, Appl. Phys. A 2009, 95, 89.
30. N. Hayashi, H. Ishii, Y. Ouchi, K. Seki, J. Appl. Phys. 2002, 92, 3784.
31. H. Peisert, M. Knupfer, J. Fink, Appl. Phys. Lett. 2002, 81, 2400.