|
|
Volumn 78, Issue 2, 2011, Pages 695-699
|
|
Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process
a
|
|
Author keywords
Annealing; MOS capacitor; SiO2; Sol gel process; Thin films
|
|
Indexed keywords
ANNEALED FILMS;
ANNEALING TEMPERATURES;
CAPACITANCE VOLTAGE;
COST EFFECTIVE;
CURRENT VOLTAGE;
DIELECTRIC CONSTANTS;
ELECTRICAL PROPERTY;
FT-IR SPECTRUM;
OPTICAL TRANSMITTANCE;
PRECURSOR MATERIALS;
SI(1 0 0);
SILICON SUBSTRATES;
SIO2;
SOL-GEL METHODS;
TETRA-ETHYL-ORTHO-SILICATE;
ANNEALING;
CAPACITORS;
COST EFFECTIVENESS;
ELECTRIC PROPERTIES;
ETHANOL;
FILM PREPARATION;
GELS;
MOS CAPACITORS;
NANOSTRUCTURED MATERIALS;
ORGANIC SOLVENTS;
PERMITTIVITY;
REFRACTIVE INDEX;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SILICATES;
SILICON OXIDES;
SOL-GELS;
SOLS;
THIN FILMS;
SOL-GEL PROCESS;
OXIDE;
SILICON;
SILICON DIOXIDE;
ARTICLE;
CHEMISTRY;
COST BENEFIT ANALYSIS;
ECONOMICS;
ELECTRIC CAPACITANCE;
GEL;
INFRARED SPECTROSCOPY;
INORGANIC CHEMISTRY;
LIGHT RELATED PHENOMENA;
METHODOLOGY;
REFRACTOMETRY;
SCANNING ELECTRON MICROSCOPY;
TEMPERATURE;
CHEMISTRY, INORGANIC;
COST-BENEFIT ANALYSIS;
ELECTRIC CAPACITANCE;
GELS;
MICROSCOPY, ELECTRON, SCANNING;
OPTICAL PHENOMENA;
OXIDES;
REFRACTOMETRY;
SILICON;
SILICON DIOXIDE;
SPECTROSCOPY, FOURIER TRANSFORM INFRARED;
TEMPERATURE;
|
|
EID: 79151480621
PISSN: 13861425
EISSN: None
Source Type: Journal
DOI: 10.1016/j.saa.2010.11.051 Document Type: Article |
|
Times cited : (13)
|
|
References (18)
|
