Optical properties and structure of SiO2 films prepared by ion-beam sputtering

Thin Solid Films

Volumn 289, Issue 1-2, 1996, Pages 84-89

  Tabata, Akimori ^a   Matsuno, Noriaki ^a,b   Suzuoki, Yasuo ^a   Mizutani, Teruyoshi ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Infrared spectroscopy; Silicon oxide; Sputtering (ion beam); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ABSORPTION SPECTROSCOPY; INFRARED SPECTROSCOPY; ION BEAMS; OPTICAL PROPERTIES; SPUTTERING; STOICHIOMETRY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ION BEAM SPUTTERING; THERMAL OXIDATION;

SILICA;

EID: 0030289028     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08899-2     Document Type: Article

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