Highly oriented VO2 thin films prepared by electrodeposition

Electrochemical and Solid-State Letters

Volumn 14, Issue 3, 2011, Pages

  Cezar, A B ^a   Graff, I L ^b   Rikers, Y ^c   Schreiner, W H ^a   Mattoso, N ^a  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b UNIVERSIDADE TECNOLÓGICA FEDERAL DO PARANÁ   (Brazil)

^c Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION TECHNIQUE; PREFERRED ORIENTATIONS; RESISTANCE CHANGE; SI (001) SUBSTRATE; TRANSITION TEMPERATURE; ULTRA-THIN;

ELECTRODEPOSITION; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 78951487309     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3525275     Document Type: Article

References (30)

1. F. J. Morin, Phys. Rev. Lett., 3, 34 (1959). 10.1103/PhysRevLett.3.34
2. J. P. Pouget, H. Launois, J. P. D'Haenens, P. Merenda, and T. M. Rice, Phys. Rev. Lett., 35, 873 (1975). 10.1103/PhysRevLett.35.873
3. J. P. Pouget, H. Launois, T. M. Rice, P. Dernier, A. Gossard, G. Villeneuve, and P. Hagenmuller, Phys. Rev. B, 10, 1801 (1974). 10.1103/PhysRevB.10.1801
4. H. Wang, X. Yi, and Y. Li, Opt. Commun., 256, 305 (2005). 10.1016/j.optcom.2005.07.005
5. C. Batista, R. Ribeiro, J. Carneiro, and V. Teixeira, J. Nanosci. Nanotechnol., 9, 4220 (2009). 10.1166/jnn.2009.M36
6. D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, J. Appl. Phys., 106, 083702 (2009). 10.1063/1.3245338
7. B. J. Kim, Y. W. Lee, S. Choi, S. J. Yun, and H.-T. Kim, IEEE Electron Device Lett., 31, 14 (2010). 10.1109/LED.2009.2034763
8. E. Strelcov, Y. Lilach, and A. Kolmakov, Nano Lett., 9, 2322 (2009). 10.1021/nl900676n
9. A. Atrei, T. Cecconi, B. Cortigiani, U. Bardi, M. Torrini, and G. Rovida, Surf. Sci., 513, 149 (2002). 10.1016/S0039-6028(02)01701-6
10. M. D. Negra, M. Sambi, and G. Granozzi, Surf. Sci., 494, 213 (2001). 10.1016/S0039-6028(01)01395-4
11. J. W. Lee, S. R. Min, H. N. Cho, and C. W. Chung, Thin Solid Films, 515, 7740 (2007). 10.1016/j.tsf.2007.03.066
12. D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, Appl. Phys. Lett., 87, 051910 (2005). 10.1063/1.2001139
13. J. Qi, G. L. Ning, X. H. Qi, and Q. Wang, J. Optoelectron. Adv. Mater., 4, 194 (2010).
14. Y. Ningyi, L. Jinhua, and L. Chenglu, Appl. Surf. Sci., 191, 176 (2002). 10.1016/S0169-4332(02)00180-0
15. B. G. Chae, H. T. Kim, S. J. Yun, B. J. Kim, Y. W. Lee, and K. Y. Kang, J. Appl. Phys., 46, 738 (2007). 10.1143/JJAP.46.738
16. L. Kang, Y. Gao, and H. Luo, ACS Appl. Mater. Interfaces, 1, 2211 (2009). 10.1021/am900375k
17. L. Kang, Y. Ga, Z. Zhang, J. Du, C. Cao, Z. Chen, and H. Luo, J. Phys. Chem. C, 114, 1901 (2010). 10.1021/jp909009w
18. Z. Zhang, Y. Gao, Z. Chen, J. Du, C. Cao, L. Kang, and H. Luo, Langmuir, 26, 10738 (2010). 10.1021/la100515k
19. M. Borek, F. Qian, V. Nagabushnam, and R. K. Singh, Appl. Phys. Lett., 63, 3288 (1993). 10.1063/1.110177
20. D. H. Kim and H. S. Kwok, Appl. Phys. Lett., 65, 3188 (1994). 10.1063/1.112476
21. T. D. Manning, I. P. Parkin, R. J. H. Clark, D. Sheel, M. E. Pemble, and D. Vernadou, J. Mater. Chem., 12, 2936 (2002). 10.1039/b205427m
22. M. B. Sahana, M. S. Dharmaprakash, and S. A. Shivashankar, J. Mater. Chem., 12, 333 (2002). 10.1039/b106563g
23. C. H. Griffith and H. K. Eastwood, J. Appl. Phys., 45, 2201 (1974). 10.1063/1.1663568
24. E. Potitron, A. Le Gal La Salle, A. Verbaere, Y. Piffard, and D. Guyomard, Electrochim. Acta, 45, 197 (1999). 10.1016/S0013-4686(99)00204-2
25. JCPDS Card no. 41-1426.
26. JCPDS Card no. 43-1051.
27. JCPDS Card no. 71-297.
28. J. Park, I. H. Oh, E. Lee, K. W. Lee, C. E. Lee, K. Song, and Y. J. Kim, Appl. Phys. Lett., 91, 153112 (2007). 10.1063/1.2798587
29. J. K. Lee, G. P. Kim, I. K. Song, and S. H. Baeck, Electrochem. Commun., 11, 1571 (2009). 10.1016/j.elecom.2009.05.053
30. S. Zhang, J. Y. Chou, and L. J. Lauhon, Nano Lett., 9, 4527 (2009). 10.1021/nl9028973