VO2 thin-film varistor based on metal-insulator transition

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 14-16

  Kim, Bong Jun ^a   Lee, Yong Wook ^b   Choi, Sungyoul ^a   Yun, Sun Jin ^a   Kim, Hyun Tak ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Pukyong National University   (South Korea)

Author keywords

Electrostatic discharge (ESD); Metal insulator transition (MIT); Surge protection; Variable resistor (varistor)

Indexed keywords

ELECTRONIC APPLICATION; HIGH CURRENTS; JUMP VOLTAGE; METAL-INSULATOR TRANSITION (MIT); OVER-VOLTAGES; PARALLEL STRIPES; RESPONSE TIME; RISING TIME; SURGE VOLTAGE; VARIABLE RESISTOR (VARISTOR); VARIABLE RESISTORS; ZNO VARISTORS;

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; METAL INSULATOR BOUNDARIES; METALS; OVERVOLTAGE PROTECTION; SEMICONDUCTOR INSULATOR BOUNDARIES; SURGE PROTECTION; THIN FILM DEVICES; VARISTORS; ZINC OXIDE;

METAL INSULATOR TRANSITION;

EID: 73049104956     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034763     Document Type: Article

References (12)

1. 2-based two-and three-terminal devices," New J. Phys., vol.6, p. 52, May 2004.
2. 2 planar-type junctions," Phys. Rev. B, Condens. Matter, vol.78, no.3, p. 033106, Jul. 2008.
3. 2 films," Appl. Phys. Lett., vol.91, no.13, p. 133-509, Sep. 2007.
4. 2 planer-type junctions with infinite negative differential resistance," J. Appl. Phys., vol.103, no.10, p. 103 708, May 2008.
5. 3," J. Korean Phys. Soc., vol.50, no.3, pp. 653-656, Mar. 2007.
6. J. W. Kim, H. S. Kang, and S. Y. Lee, "Effect of deposition rate on the property of ZnO thin films deposited by pulsed laser deposition," KIEE J. Elect. Eng. Technol., vol.1, no.1, pp. 98-100, Mar. 2006.
7. R. Fors, S. I. Khartsev, and A. M. Grishin, "Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition," Phys. Rev. B, Condens. Matter, vol.71, no.4, p. 045305, Jan. 2005.
8. H. T. Kim, "Extension of the Brinkman-Rice picture and the Mott transition," Phys. C, vol.341-348, no.1, pp. 259-260, Nov. 2000.
9. 2 and programmable critical temperature sensor," Appl. Phys. Lett., vol.90, no.2, p. 023515, Jan. 2007.
10. A. Z. H. Wang, On-Chip ESD Protection for Integrated Circuits. Dordrecht, The Netherlands: Kluwer, 2002.
11. M. H. Kim and J. Kim, "The characterizing analysis of a buried-channel MOSFET based on the 3-D numerical simulation," KIEE J. Elect. Eng. Technol., vol.2, no.2, pp. 267-273, Jun. 2007.
12. H. H. Lee, V. T. Phan, B. Sergey, and T. W. Chun, "A novel control strategy for a three-phase rectifier with high power factor and stable output voltage," J. Power Electron., vol.7, no.3, pp. 203-212, Jul. 2007.