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Volumn 311, Issue 7, 2009, Pages 1962-1971
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High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication
a
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Author keywords
A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. High electron mobility transistors
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Indexed keywords
ARSENIC;
CRYSTAL GROWTH;
CURRENT VOLTAGE CHARACTERISTICS;
DIELECTRIC DEVICES;
DRAIN CURRENT;
ELECTRIC CONDUCTIVITY;
ELECTRIC POTENTIAL;
ELECTRON MOBILITY;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GERMANIUM;
HIGH PERFORMANCE LIQUID CHROMATOGRAPHY;
MOLECULAR BEAMS;
MOS DEVICES;
MOSFET DEVICES;
OPTOELECTRONIC DEVICES;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
SURFACE MORPHOLOGY;
SURFACE TREATMENT;
TRANSISTORS;
TRANSMISSION ELECTRON MICROSCOPY;
VOLTAGE REGULATORS;
A3. MOLECULAR-BEAM EPITAXY;
ANNEALING TREATMENTS;
ATOMIC-LAYER DEPOSITIONS;
B2. SEMICONDUCTING III-V MATERIALS;
B3. HIGH ELECTRON MOBILITY TRANSISTORS;
BACKGROUND PRESSURES;
C-V CHARACTERISTICS;
DOUBLE STEPS;
EX-SITU;
GAAS;
GE SURFACES;
HIGH - K DIELECTRICS;
HIGH MOBILITIES;
HIGH QUALITIES;
HIGH TEMPERATURES;
III-V SEMICONDUCTORS;
IN-SITU;
LOW TEMPERATURES;
LOW-LEAKAGE CURRENTS;
MBE GROWTHS;
METAL-OXIDE SEMICONDUCTORS;
MIGRATION-ENHANCED EPITAXIES;
MONOLAYER FORMATIONS;
OUT DIFFUSIONS;
PHOTOLUMINESCENCE MEASUREMENTS;
SECONDARY ION-MASS SPECTROMETRIES;
SI SUBSTRATES;
SINGLE DOMAINS;
SMOOTH SURFACES;
TEM;
VAPOR DEPOSITION SYSTEMS;
VIRTUAL SUBSTRATES;
X-RAY DIFFRACTIONS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 63349112205
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.138 Document Type: Article |
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Times cited : (27)
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References (32)
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