36-GHz high-responsivity Ge photodetectors grown by RPCVD

IEEE Photonics Technology Letters

Volumn 21, Issue 10, 2009, Pages 672-674

  Suh, Dongwoo ^a   Kim, Sanghoon ^a   Joo, Jiho ^a   Kim, Gyungock ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Bandwidth; Germanium photodetectors; Reduced pressure chemical vapor deposition (RPCVD); Responsivity

Indexed keywords

DATA TRANSMISSION; EYE DIAGRAMS; FABRICATED DEVICE; GE EPILAYER; GE P-I-N PHOTODETECTORS; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-SPEED; ON CHIP MEASUREMENTS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION (RPCVD); RESIDUAL TENSILE STRAIN; RESPONSIVITY;

BANDWIDTH; CHEMICAL VAPOR DEPOSITION; GERMANIUM; OPTOELECTRONIC DEVICES; TENSILE STRAIN; VAPORS; X RAY DIFFRACTION ANALYSIS;

PHOTODETECTORS;

EID: 67049086620     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2016761     Document Type: Article

References (10)

1. L. Colace, M. Balbi, G. Masini, and G. Assanto, "Ge on Si p-i-n photodiodes operating at 10 Gbit/s," Appl. Phys. Lett., vol. 88, pp. 101111-1-101111-3, Mar. 2006.
2. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on silicon-on- insulator substrate," Opt. Express, vol. 15, pp. 13965-13971, Oct. 2007.
3. M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1510-1512, Jul. 2005.
4. J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimmerling, J. Chen, F. O. Liday, F. X. Kartner, and J. Yasaitis, "High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett., vol. 87, pp. 103501-1-103501-3, Aug. 2005.
5. C. Gunn, A. Narasimha, B. Analui, Y. Liang, and T. J. Sleboda, "A 40 Gbps silicon photonics transceiver," in Proc. SPIE Conf., 2007, vol. 6477, pp. 64770N-1-64770N-8.
6. L. Vivien, M. Rouviere, X. L. Roux, J. Mangeney, P. Crozat, D. M. Morini, D. Pascal, E. Cassan, S. Laval, J.-F. Damlencourt, L. E. Melhaoui, and J.-M. Fedeli, "Germanium on silicon photodetectors for telecom wavelengths," in Proc. SPIE Conf., 2007, vol. 6477, pp. 647707-1-647707-8.
7. O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, "Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared," IEEE Photon. Technol. Lett., vol. 19, no. 20, pp. 1631-1633, Oct. 15, 2007.
8. Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H.-C. Luan, and L. C. Kimmerling, "Strain-induced band gap shrinkage in Ge grown on Si substrate," Appl. Phys. Lett., vol. 82, pp. 2044-2046, Feb. 2003.
9. J. M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon, J. M. Fédéli, M. Rouvière, L. Vivien, and S. Laval, "Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-μm photodetection," J. Appl. Phys., vol. 95, pp. 5905-5913, Feb. 2004.
10. G. Kim, I. Kim, J. Baek, and O. Kwon, "Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector," Appl. Phys. Lett., vol. 83, pp. 1249-1251, Jun. 2003.