Statistics of electromigration early failures in Cu/oxide dual-damascene interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 341-349

  Ogawa, E T ^a   Lee, K D ^a   Matsuhashi, H ^a   Ko, K S ^a   Justison, P R ^a   Ramamurthi, A N ^a   Bierwag, A J ^a   Ho, P S ^a   Blaschke, V A ^b   Havemann, R H ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

Atherosclerosis; Electromigration; Grain boundaries; Joining processes; Laboratories; Metallization; Packaging; Statistics; Surface resistance; Testing

Indexed keywords

ACTIVATION ENERGY; ELECTROMIGRATION; GRAIN BOUNDARIES; LABORATORIES; METALLIZING; PACKAGING; RELIABILITY; RELIABILITY ANALYSIS; STATISTICS; SURFACE RESISTANCE; TANTALUM; TESTING;

ATHEROSCLEROSIS; DUAL DAMASCENE INTERCONNECT; DUAL DAMASCENE INTERCONNECTS; ELECTROMIGRATION RELIABILITY; FAILURE DISTRIBUTIONS; JOINING PROCESS; STATISTICAL CONCEPTS; STATISTICAL EVIDENCE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 78751556896     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922925     Document Type: Conference Paper

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