Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Ryckman, Judson D ^a   Reed, Robert A ^a   Weller, Robert A ^a   Fleetwood, D M ^a   Weiss, S M ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; ENERGETIC PHOTONS; HIGH DOSE RATE; NATIVE OXIDE THICKNESS; OXIDATION MECHANISMS; OXIDE GROWTH; PHOTOINDUCED OXIDATION; RADIATION RESPONSE; RADIATION-INDUCED; REACTIVE OXYGEN SPECIES; REFLECTANCE SPECTROSCOPY; ROOM TEMPERATURE; ROOM TEMPERATURE OXIDATION; SILICON SAMPLES; STRETCHING MODES; SURFACE SPECIES; X RAY IRRADIATION; X RAY RADIATION;

FOURIER TRANSFORMS; MOLECULAR OXYGEN; OXIDATION; SILICON OXIDES; SPECTROSCOPY;

POROUS SILICON;

EID: 78751547204     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3512965     Document Type: Article

References (19)

1. A. Holmes-Siedle and L. Adams, Handbook of Radiation Effects (Oxford, New York, 2002).
2. A. Holmes-Siedle and L. Adams, Chemistry 28, 2 (1986).
3. G. Rikner and E. Grusell, Phys. Med. Biol. 0031-9155 32, 1109 (1987). 10.1088/0031-9155/32/9/004
4. P. E. Dodd and L. W. Massengill, IEEE Trans. Nucl. Sci. 0018-9499 50, 583 (2003). 10.1109/TNS.2003.813129
5. J. S. Fu, J. C. Mao, E. Wu, Y. Q. Jia, B. R. Zhang, L. Z. Zhang, G. G. Qin, G. S. Wui, and Y. H. Zhang, Appl. Phys. Lett. 0003-6951 63, 1830 (1993). 10.1063/1.110677
6. V. S. Y. Lin, K. Motesharei, K. P. S. Dancil, M. J. Sailor, and M. R. Ghadiri, Science 0036-8075 278, 840 (1997). 10.1126/science.278.5339.840 (Pubitemid 27467917)
7. C. Pacholski, M. Sartor, M. J. Sailor, F. Cunin, and G. M. Miskelly, J. Am. Chem. Soc. 0002-7863 127, 11636 (2005). 10.1021/ja0511671 (Pubitemid 41208748)
8. G. Rong, J. D. Ryckman, R. Mernaugh, and S. M. Weiss, Appl. Phys. Lett. 0003-6951 93, 161109 (2008). 10.1063/1.3005620
9. J. D. Ryckman, M. Liscidini, J. E. Sipe, and S. M. Weiss, Appl. Phys. Lett. 0003-6951 96, 171103 (2010). 10.1063/1.3421545
10. S. I. Raider, R. Flitsch, and M. J. Palmer, J. Electrochem. Soc. 0013-4651 122, 413 (1975). 10.1149/1.2134225
11. A. V. Osipov, P. Patzner, and P. Hess, Appl. Phys. A: Mater. Sci. Process. 0947-8396 82, 275 (2006). 10.1007/s00339-005-3415-x (Pubitemid 41744325)
12. J. -Y. Zhang and I. W. Boyd, Appl. Phys. Lett. 0003-6951 71, 2964 (1997). 10.1063/1.120230
13. J. -Y. Zhang and I. W. Boyd, Appl. Surf. Sci. 0169-4332 186, 64 (2002). 10.1016/S0169-4332(01)00610-9 (Pubitemid 34231917)
14. D. B. Mawhinney, J. A. Glass, Jr., and J. T. Yates, Jr., J. Phys. Chem. B 1089-5647 101, 1202 (1997). 10.1021/jp963322r
15. M. A. Hory, R. H́rino, M. Ligeon, F. Muller, F. Gaspard, I. Mihalcescu, and J. C. Vial, Thin Solid Films 0040-6090 255, 200 (1995). 10.1016/0040-6090(94)05654-V
16. J. E. Lugo, H. A. Lopez, S. Chan, and P. M. Fauchet, J. Appl. Phys. 0021-8979 91, 4966 (2002). 10.1063/1.1461898 (Pubitemid 34598955)
17. F. Bensliman, Y. Sawada, K. Tsujino, and M. Matsumura, J. Electrochem. Soc. 0013-4651 154, F102 (2007). 10.1149/1.2717381 (Pubitemid 47109866)
18. W. Haiss, P. Raisch, L. Bitsch, R. J. Nichols, X. Xia, J. J. Kelly, and D. J. Schiffrin, J. Electroanal. Chem. 0022-0728 597, 1 (2006). 10.1016/j.jelechem.2006.07.027 (Pubitemid 44488685)
19. A. Kazor and I. W. Boyd, J. Appl. Phys. 0021-8979 75, 227 (1994). 10.1063/1.355888