Oxidation of atomically flat and hydrogen-terminated Si(111) surfaces by hydrogen peroxide

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Bensliman, Fahd ^a   Sawada, Yuuki ^a   Tsujino, Kazuya ^a   Matsumura, Michio ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY FLAT SURFACES; OXIDATION RATE; SURFACE CONDITION;

CURRENT VOLTAGE CHARACTERISTICS; ELECTROOXIDATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN PEROXIDE; RATE CONSTANTS; SURFACE TREATMENT;

SILICON;

EID: 34547224221     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2717381     Document Type: Article

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