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Electrochemical and Solid-State Letters

Volumn 14, Issue 1, 2011, Pages

Resistive switching behavior in the Ru/ Y2 O3 /TaN nonvolatile memory device

(3) Pan, Tung Ming a Chen, Kai Ming a Lu, Chih Hung a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; DATA RETENTION; DE-TRAPPING; HIGH RESISTANCE; HIGH-RESISTANCE STATE; MEMORY APPLICATIONS; MEMORY DEVICE; NON-VOLATILE; NONDESTRUCTIVE READOUT; NONVOLATILE MEMORY DEVICES; OHMIC CONDUCTION; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; ROOM TEMPERATURE; ROOM-TEMPERATURE PROCESS; SCHOTTKY EMISSIONS; TESTED DEVICES;

NONVOLATILE STORAGE; SWITCHING SYSTEMS; TANNING;

TANTALUM COMPOUNDS;

EID: 78751526354 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3509144 Document Type: Article

Times cited : (16)

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