Carbon nanotube-gated carbon nanotube field-effect transistors

Nanoscience and Nanotechnology Letters

Volumn 2, Issue 1, 2010, Pages 21-25

  Li, Hong ^a   Zou, Jianping ^a   Zhang, Qing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Carbon Nanotube Gate; Field Effect Transistors; Modeling; Short Channel; Subthreshold.

Indexed keywords

BOTTOM GATE; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DEVICE MODELING; DRAIN-INDUCED BARRIER LOWERING; GATE REGION; HOLE TUNNELING; MODELING; SHORT CHANNELS; SUBTHRESHOLD; SUBTHRESHOLD REGION; SUBTHRESHOLD SWING; TOP-GATE;

CARBON NANOTUBES; DEGRADATION;

FIELD EFFECT TRANSISTORS;

EID: 78651569531     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2010.1053     Document Type: Article

References (33)

1. P. L. McEuen, M. S. Fuhrer, and H. Park, IEEE T. Nanotechnol. 1, 78 (2002).
2. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature 393, 49 (1998).
3. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
4. Z. J. Li, L. Wang, Y. J. Su, P. Liu, and Y. F. Zhang, Nano-Micro. Lett. 1, 9 (2009).
5. M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A. Thess, and R. E. Smalley, Science 275, 1992 (1997).
6. H. Li, Q. Zhang, and J. Li, Appl. Phys. Lett. 88, 013508 (2006).
7. H. Li, Q. Zhang, and N. Marzari, Nano Lett. 8, 64 (2008).
8. M. S. Fuhrer, B. M. Kim, T. Dürkop, and T. Brintlinger, Nano Lett. 2, 755 (2002).
9. M. Radosavljevíc, M. Freitag, K. V. Thadani, and A. T. Johnson, Nano Lett. 2, 761 (2002).
10. J. Kong, N. R. Franklin, C. Zhou, M. G. Chapline, S. Peng, K. Cho, and H. Dai, Science 287, 622 (2000).
11. T. Someya, J. Small, P. Kim, C. Nuckolls, and J. T. Yardley, Nano Lett. 3, 877 (2003).
12. K. Besteman, J.-O. Lee, F. G. M. Wiertz, H. A. Heering, and C. Dekker, Nano Lett. 3, 727 (2003).
13. J. Li, Q. Ye, A. Cassell, H. T. Ng, R. Stevens, J. Han, and M. Meyyappan, Appl. Phys. Lett. 82, 2491 (2003).
14. X. Guo, J. P. Small, J. E. Klare, Y. Wang, M. S. Purewal, I. W. Tam, B. H. Hong, R. Caldwell, L. Huang, S. O'Brien, J. Yan, R. Breslow, S. J. Wind, J. Hone, P. Kim, and C. Nuckolls, Science 311, 356 (2006).
15. D. Wei, Y. Liu, L. Cao, Y. Wang, H. Zhang, and G. Yu, Nano Lett. 8, 1625 (2008).
16. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE T. Nanotechnol. 4, 153 (2005).
17. A. Javey, Q. Wang, A. Ural, Y. Li, and H. Dai, Nano Lett. 2, 929 (2002).
18. S. J. Wind, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 91, 058301 (2003).
19. B.-H. Chen, H.-C. Lin, T.-Y. Huang, J.-H. Wei, H.-H. Wang, M.-J. Tsai, and T. S. Chao, Appl. Phys. Lett. 88, 093502 (2006).
20. H. Li and Q. Zhang, Appl. Phys. Lett. 94, 022101 (2009).
21. J.-Y. Park, Nanotechnology 18, 095202 (2007).
22. J. Svensson, Y. Tarakanov, D. S. Lee, J. M. Kinaret, Y. W. Park, and E. E. B. Campbell, Nanotechnology 19, 325201 (2008).
23. S. M. Sze, Physics of Semiconductor Devices, 2nd edn., Wiley, New York (1981).
24. J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, and Ph. Avouris, IEDM, December, San Francisco, USA (2002).
25. X. Liu, Z. Luo, S. Han, T. Tang, D. Zhang, and C. Zhou, Appl. Phys. Lett. 86, 243501 (2005).
26. J. Li, Q. Zhang, N. Peng, and Q. Zhu, Appl. Phys. Lett. 86, 153116 (2005).
27. P. G. Collins, M. S. Arnold, and Ph. Avouris, Science 292, 706 (2001).
28. A. Javey, J. Guo, D. B. Farmer, Q. Wang, D. Wang, R. G. Gordon, M. Lundstrom, and H. Dai, Nano Lett. 4, 447 (2004).
29. J. U. Lee, P. P. Gipp, and C. M. Heller, Appl. Phys. Lett. 85, 145 (2004).
30. J. Guo, Carbon Nanotube Electronics: Modeling, Physics, and Applications [Dissertation], Purdue University (2004).
31. J. W. Mintmire and C. T. White, Phys. Rev. Lett. 81, 2506 (1998).
32. Only the first two subbands are considered here since the first subband contributes more than 90% current in an ambiplar CNTFET according to Guo et al., J. Guo, A. Javey, H. Dai, and M. Lundstrom, IEDM 703 (2004), The reason is that the SB for the 2nd subband is much higher due to the large subband spacing, resulting in much smaller thermionic emission and tunneling current through the SB because both the thermionic emission and tunneling current component depends exponentially on the barrier height.
33. D. Jiménez, X. Cartoixá, E. Miranda, J. Suñe, F. A. Chaves, and S. Roche, Nanotechnology 18, 025201 (2007).