Irregular resistive switching characteristics and its mechanism based on NiO unipolar switching resistive random access memory (RRAM)

2010 Silicon Nanoelectronics Workshop, SNW 2010

Volumn , Issue , 2010, Pages

  Ryoo, Kyung Chang ^a   Oh, Jeong Hoon ^a   Jeong, Hongsik ^b   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESISTIVE STATE; OPTIMAL PROCESS; RANDOM ACCESS MEMORIES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE STATE; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING CURRENTS; UNDESIRABLE EFFECTS; UNIPOLAR SWITCHING;

NANOELECTRONICS; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

SWITCHING;

EID: 77957979505     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SNW.2010.5562580     Document Type: Conference Paper

References (8)

1. Ryoo, K. C, et al., Si Nanoelec. Workshop, (2009), 63
2. Waser, R., and Aono, M., Nat. Mater. (2007) 6, 833
3. Gibbons, J. F., and Beadle, W. E., Solid-State Electron. (1964) 7, 785
4. Simmons, J. G., and Verderber, R. R., Proc. R. Soc. London, Ser. A (1967) 301, 77
5. Baek, I. G., et al., Tech. Dig. IEDM (2004), 587
6. Kinoshita, K., et al., Appl. Phys. Lett. (2006) 89, 103509
7. Sawa, A., Materials today. Vol. 11, pp.28-36, 2008
8. Baek, I. G., et al., Tech. Dig. IEDM (2005), 750