Five-step (Pad-pad short-pad open-short-open) de-embedding method and its verification

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 398-400

  Kang, In Man ^a   Jung, Seung Jae ^a   Choi, Tae Hoon ^a   Jung, Jae Hong ^a   Chung, Chulho ^a   Kim, Han Su ^a   Oh, Hansu ^a   Lee, Hyun Woo ^a   Jo, Gwangdoo ^a   Kim, Young Kwang ^a   Kim, Han Gu ^a   Choi, Kyu Myung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Gate electrode resistance; Input capacitance; On wafer RF measurement; Parasitic de embedding; RF MOSFETs

Indexed keywords

GATE ELECTRODE RESISTANCE; INPUT CAPACITANCE; ON-WAFER RF MEASUREMENT; PARASITIC DE-EMBEDDING; RF MOSFETS;

MOSFET DEVICES; REFRACTORY METAL COMPOUNDS; SMELTING;

CAPACITANCE;

EID: 67349104138     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2013881     Document Type: Article

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