메뉴 건너뛰기




Volumn 54, Issue 10, 2007, Pages 2706-2714

A general 4-port solution for 110 GHz on-wafer transistor measurements with or without impedance standard substrate (ISS) calibration

Author keywords

4 port network; Calibration; Deembedding; Error correction; Microwave on wafer measurements; On wafer parasitics; RF CMOS; Scattering parameters

Indexed keywords

CALIBRATION; CMOS INTEGRATED CIRCUITS; STANDARDS; SUBSTRATES;

EID: 35148857506     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904362     Document Type: Article
Times cited : (38)

References (15)
  • 3
    • 0038575149 scopus 로고    scopus 로고
    • A calibrated lumped-element de-embedding technique for on-wafer RF characterization of high-quality inductors and high-speed transistors
    • Mar
    • L. F. Tiemeijer and R. J. Havens, "A calibrated lumped-element de-embedding technique for on-wafer RF characterization of high-quality inductors and high-speed transistors," IEEE Trans. Electron Devices vol. 50, no. 3, pp. 822-829, Mar. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.3 , pp. 822-829
    • Tiemeijer, L.F.1    Havens, R.J.2
  • 4
    • 0242468144 scopus 로고    scopus 로고
    • A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs
    • Nov
    • Q. Liang, J. D. Cressler, G. Niu, Y. Lu, G. Freeman, D. C. Ahlgren et al., "A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs," IEEE Trans. Microw. Theory Tech., vol. 51, no. 11, pp. 2165-2174, Nov. 2003.
    • (2003) IEEE Trans. Microw. Theory Tech , vol.51 , Issue.11 , pp. 2165-2174
    • Liang, Q.1    Cressler, J.D.2    Niu, G.3    Lu, Y.4    Freeman, G.5    Ahlgren, D.C.6
  • 6
    • 0026171562 scopus 로고
    • A three-step method for the de-embedding of high-frequency S-parameter measurements
    • Jun
    • H. Cho and D. E. Burk, "A three-step method for the de-embedding of high-frequency S-parameter measurements," IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1371-1375, Jun. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.6 , pp. 1371-1375
    • Cho, H.1    Burk, D.E.2
  • 7
    • 0035307256 scopus 로고    scopus 로고
    • Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
    • Apr
    • E. P. Vandamme, D. M. M. P. Schreurs, and G. Van Dinther, "Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures," IEEE Trans. Electron Devices, vol. 48, no. 4, pp. 737-742, Apr. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.4 , pp. 737-742
    • Vandamme, E.P.1    Schreurs, D.M.M.P.2    Van Dinther, G.3
  • 8
    • 0033894616 scopus 로고    scopus 로고
    • A four-step method for de-embedding gigahertz on-wafer CMOS measurements
    • Apr
    • T. E. Kolding, "A four-step method for de-embedding gigahertz on-wafer CMOS measurements," IEEE Trans. Electron Devices, vol. 47, no. 4, pp. 734-740, Apr. 2000.
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.4 , pp. 734-740
    • Kolding, T.E.1
  • 9
    • 14544271409 scopus 로고    scopus 로고
    • Comparison of the 'pad-open-short' and 'open-short-load' deembedding techniques for accurate on-wafer RF characterization of high-quality passives
    • Feb
    • L. F. Tiemeijer, R. J. Havens, A. B. M. Jansman, and Y. Bouttement, "Comparison of the 'pad-open-short' and 'open-short-load' deembedding techniques for accurate on-wafer RF characterization of high-quality passives," IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 723-729, Feb. 2005.
    • (2005) IEEE Trans. Microw. Theory Tech , vol.53 , Issue.2 , pp. 723-729
    • Tiemeijer, L.F.1    Havens, R.J.2    Jansman, A.B.M.3    Bouttement, Y.4
  • 10
    • 0026943511 scopus 로고
    • A general noise de-embedding procedure for packaged two-port linear active devices
    • Nov
    • R. A. Pucel, W. Struble, R. Hallgren, and U. L. Rohde, "A general noise de-embedding procedure for packaged two-port linear active devices," IEEE Trans. Microw. Theory Tech., vol. 40, no. 11, pp. 2013-2024, Nov. 1992.
    • (1992) IEEE Trans. Microw. Theory Tech , vol.40 , Issue.11 , pp. 2013-2024
    • Pucel, R.A.1    Struble, W.2    Hallgren, R.3    Rohde, U.L.4
  • 14
    • 0027647689 scopus 로고
    • Calibration of 16-term error model
    • Aug
    • K. J. Silvonen, "Calibration of 16-term error model," Electron. Lett., vol. 29, no. 17, pp. 1544-1545, Aug. 1993.
    • (1993) Electron. Lett , vol.29 , Issue.17 , pp. 1544-1545
    • Silvonen, K.J.1
  • 15
    • 0032277985 scopus 로고    scopus 로고
    • An effective gate resistance model for CMOS RF and noise modeling
    • X. Jin, J.-J. Ou, C.-H. Chen, W. Liu, M. J. Deen, P. R. Gray et al. "An effective gate resistance model for CMOS RF and noise modeling," in IEDM Tech. Dig., 1998, pp. 961-964.
    • (1998) IEDM Tech. Dig , pp. 961-964
    • Jin, X.1    Ou, J.-J.2    Chen, C.-H.3    Liu, W.4    Deen, M.J.5    Gray, P.R.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.