Highly efficient 1.53 μm luminescence in ErxYb 2-xSi2O7 thin films grown on Si substrate

Materials Letters

Volumn 65, Issue 5, 2011, Pages 860-862

  Zheng, Jun ^a   Tao, Yeliao ^a   Wang, Wei ^a   Zhang, Lingzi ^a   Zuo, Yuhua ^a   Xue, Chunlai ^a   Cheng, Buwen ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Luminescence; Optical materials and properties; Sputtering; Thin films

Indexed keywords

ANNEALING PROCESS; EMISSION INTENSITY; ER CONCENTRATIONS; HIGH-GAIN; OPTICAL MATERIALS AND PROPERTIES; POTENTIAL APPLICATIONS; SI SUBSTRATES; SOLUBILITY LIMITS; SPUTTERING METHODS; WAVEGUIDE AMPLIFIERS;

ERBIUM; LUMINESCENCE; MATERIALS PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; THIN FILMS; YTTERBIUM;

OPTICAL FILMS;

EID: 78651353447     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.11.067     Document Type: Article

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