Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

  Lo Savio, R ^a   Miritello, M ^a   Cardile, P ^a,b   Priolo, F ^a,b  

^a UNIVERSITY OF CATANIA   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; BODY-CENTERED CUBIC; CONCENTRATION DEPENDENCE; CROSS RELAXATION; CRYSTALLINE SILICONS; EMITTING MATERIAL; ER CONCENTRATIONS; ER-DOPED; EXCITATION CONDITIONS; EXCITED LEVELS; HIGH CONCENTRATION; INFRARED LUMINESCENCE; INFRARED REGIONS; LATTICE PARAMETERS; LOW CONCENTRATIONS; MAGNETRON CO-SPUTTERING; NONRADIATIVE DECAY RATE; OPTICAL EMISSIONS; PHOTOLUMINESCENCE EMISSION; PL EMISSION; POLYCRYSTALLINE; POPULATION INVERSIONS; RADIO FREQUENCIES; ROOM TEMPERATURE;

CONCENTRATION (PROCESS); DECAY (ORGANIC); ENERGY TRANSFER; ERBIUM; LIGHT EMISSION; LIGHT TRANSMISSION; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SOLAR ENERGY; THIN FILMS;

ERBIUM COMPOUNDS;

EID: 69749086198     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3195077     Document Type: Article

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