Si-Ge-based oxynitrides: From molecules to solids

Chemistry of Materials

Volumn 22, Issue 13, 2010, Pages 3884-3899

  Weng, C ^a   Kouvetakis, J ^a   Chizmeshya, A V G ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING LAYERS; DENSITY FUNCTIONAL THEORY SIMULATIONS; DISORDERED SOLIDS; ENTHALPY OF FORMATION; GATE MATERIALS; HETERONUCLEAR; HIGH MOBILITY; HIGH TEMPERATURE; INDUSTRIAL SCALE; MIXING ENTROPY; ORDERED STRUCTURES; OXYNITRIDES; POLYTYPES; POTENTIAL APPLICATIONS; QUANTITATIVE VALUES; SMALL ENERGY; SYNTHETIC ROUTES; THERMOCHEMICAL PROPERTIES; THERMOELASTIC PROPERTIES; TUNABLE DIELECTRICS; UNIFORM DISTRIBUTION;

CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; GERMANIUM; SILICON ALLOYS; SILICON NITRIDE; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY;

SILICON;

EID: 78651295860     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm903772n     Document Type: Article

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