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Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition

(6) Huang, Yong a Ryou, Jae Hyun a Dupuis, Russell D a,b Petschke, Adam c Mandl, Martin c Chuang, Shun Lien c

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

c University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTHS; EPITAXIAL STRUCTURE; INAS/GASB; INAS/GASB SUPERLATTICES; INTERFACIAL LAYER; LOW STRAINS; MATERIAL QUALITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMAL MORPHOLOGY; PEAK RESPONSIVITY; PIN PHOTODIODE; SUPER-LATTICE STRUCTURES; TYPE-II SUPERLATTICES;

GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; STRUCTURAL OPTIMIZATION; SUPERLATTICES;

TENSILE STRAIN;

EID: 77954043622 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456386 Document Type: Article

Times cited : (28)

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