Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1901-1904

  Khoshakhlagh, A ^a   Plis, E ^a   Myers, S ^a   Sharma, Y D ^a   Dawson, L R ^a   Krishna, S ^a  

^a MSC01 1070   (United States)

Author keywords

A1. Interfaces; A1. Superlattices; A3. Antimonides; A3. Molecular beam epitaxy; B3. Infrared devices

Indexed keywords

CRYSTAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; INFRARED DEVICES; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; THERMAL EFFECTS; WAVES; X RAY DIFFRACTION ANALYSIS;

A1. INTERFACES; A1. SUPERLATTICES; A3. ANTIMONIDES; A3. MOLECULAR BEAM EPITAXY; B3. INFRARED DEVICES;

GALLIUM ALLOYS;

EID: 63349089527     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.027     Document Type: Article

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