Strategy for preparing Al-doped ZnO thin film with high mobility and high stability

Crystal Growth and Design

Volumn 11, Issue 1, 2011, Pages 21-25

  Zhan, Zhibing ^a   Zhang, Jiye ^a   Zheng, Qinghong ^a   Pan, Danmei ^b   Huang, Jin ^b   Huang, Feng ^a   Lin, Zhang ^b  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

^b FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AZO FILMS; AZO THIN FILMS; CRYSTALLINITIES; GAS-PHASE DEPOSITION; HEAVILY DOPED; HEAVY DOPING; HIGH CARRIER MOBILITY; HIGH CONCENTRATION; HIGH MOBILITY; HIGH STABILITY; HIGH THERMAL; HIGH THERMAL STABILITY; LOCAL LATTICE STRUCTURE; OXIDIZING ATMOSPHERE; VALENCE STATE; ZINC ATOMS; ZINC VACANCY; ZINC VAPORS; ZNO;

ALUMINUM; CARRIER CONCENTRATION; CHEMICAL STABILITY; CONCENTRATION (PROCESS); FILM PREPARATION; OPTICAL FILMS; SEMICONDUCTOR DOPING; THIN FILMS; VACANCIES; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

CARRIER MOBILITY;

EID: 78651070831     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg101216z     Document Type: Article

References (25)

1. Hiramatsu, H.; Ohta, H.; Suzuki, T.; Honjo, C.; Ikuhara, Y.; Ueda, K.; Kamiya, T.; Hirano, M.; Hosono, H. Cryst. Growth Des. 2004, 4, 301
2. Look, D. C.; Leedy, K. D.; Tomich, D. H.; Bayraktaroglu, B. Appl. Phys. Lett. 2010, 96, 062102
3. Masuda, Y.; Kondo, M.; Koumoto, K. Cryst. Growth Des. 2009, 9, 555
4. Minami, T. Semicond. Sci. Technol. 2005, 20, S35
5. Igasaki, Y.; Saito, H. J. Appl. Phys. 1991, 69, 2190
6. Pei, Z. L.; Sun, C.; Tan, M. H.; Xiao, J. Q.; Guan, D. H.; Huang, R. F.; Wen, L. S. J. Appl. Phys. 2001, 90, 3432
7. Chambers, S. A. Adv. Mater. 2010, 22, 219
8. Kim, H.; Gilmore, C. M.; Horwitz, J. S.; Pique, A.; Murata, H.; Kushto, G. P.; Schlaf, R.; Kafafi, Z. H.; Chrisey, D. B. Appl. Phys. Lett. 2000, 76, 259
9. Lu, J. G.; Ye, Z. Z.; Zeng, Y. J.; Zhu, L. P.; Wang, L.; Yuan, J.; Zhao, B. H.; Liang, Q. L. J. Appl. Phys. 2006, 100, 073714
10. Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N. J. Appl. Phys. 2007, 102, 083529
11. Tohsophon, T.; Hupkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N. Thin Solid Films 2006, 511, 673
12. Minami, T.; Miyata, T. Thin Solid Films 2008, 517, 1474
13. Minami, T. Thin Solid Films 2008, 516, 5822
14. Kim, K. H.; Park, K. C.; Ma, D. Y. J. Appl. Phys. 1997, 81, 7764
15. Lany, S.; Zunger, A. Phys. Rev. Lett. 2007, 98, 045501
16. Lin, B. X.; Fu, Z. X.; Jia, Y. B. Appl. Phys. Lett. 2001, 79, 943
17. Schwartz, D. A.; Gamelin, D. R. Adv. Mater. 2004, 16, 2115
18. Zhang, W. Y.; Meng, Q. L.; Lin, B. X.; Fu, Z. X. Sol. Energy Mater. Sol. Cells 2008, 92, 949
19. Hurle, D. T. J. J. Appl. Phys. 1999, 85, 6957
20. Ellmer, K.; Kudella, F.; Mientus, R.; Schieck, R.; Fiechter, S. Thin Solid Films 1994, 247, 15
21. Alcock, C. B.; Itkin, V. P.; Horrigan, M. K. Can. Metall. Q. 1984, 23, 309
22. Kato, H.; Sano, M.; Miyamoto, K.; Yao, T. J. Cryst. Growth 2002, 237, 538
23. Igasaki, Y.; Saito, H. J. Appl. Phys. 1991, 70, 3613
24. Halliburton, L. E.; Giles, N. C.; Garces, N. Y.; Luo, M.; Xu, C. C.; Bai, L. H.; Boatner, L. A. Appl. Phys. Lett. 2005, 87, 172108
25. Lin, W.; Ma, R. X.; Xue, J. S.; Kang, B. Sol. Energy Mater. Sol. Cells 2007, 91, 1902