Performance optimization of antenna-coupled Al/AlOx/Pt tunnel diode infrared detectors

IEEE Journal of Quantum Electronics

Volumn 47, Issue 1, 2011, Pages 126-135

  Bean, Jeffrey A ^a   Weeks, Arthur ^b   Boreman, Glenn D ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b University of Central Florida   (United States)

Author keywords

Antennas; infrared detectors; infrared measurements; thin film devices; tunnel diodes

Indexed keywords

ANTENNA-COUPLED; APPLIED BIAS; BIASING CONDITIONS; COMPREHENSIVE STUDIES; CURRENT VOLTAGE; DEVICE PERFORMANCE; FABRICATION PARAMETERS; FABRICATION PROCEDURE; FIGURE OF MERIT; INFRARED DETECTION; INFRARED MEASUREMENTS; NON-LINEARITY; PARAMETERIZED; PERFORMANCE OPTIMIZATIONS; TUNNELING BARRIER; TUNNELING OXIDES;

ANTENNAS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; FABRICATION; INFRARED DETECTORS; INFRARED RADIATION; OPTIMIZATION; PLATINUM; SIGNAL TO NOISE RATIO; THIN FILM DEVICES; THIN FILMS; TUNNEL DIODES;

DETECTORS;

EID: 78650986301     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2081971     Document Type: Article

References (47)

1. C. Fumeaux, W. Herrmann, H. Rothuizen, P. De Natale, and F. K. Kneubühl, "Mixing of 30 THz laser radiation with nanometer thinfilm Ni-NiO-Ni diodes and integrated bow-tie antennas," Appl. Phys. B: Lasers Opt., vol. 63, no. 2, pp. 135-140, Aug. 1996.
2. I. Codreanu, F. González, and G. Boreman, "Detection mechanisms in microstrip dipole antenna-coupled infrared detectors," Infrared Phys. &Technol., vol. 44, no. 3, pp. 155-163, Jun. 2003.
3. P. C. Hobbs, R. B. Laibowitz, and F. R. Libsch, "Ni-NiO-Ni tunnel junctions for terahertz and infrared detection," Appl. Opt., vol. 44, no. 32, pp. 6813-6822, Nov. 2005.
4. P. Esfandiari, G. Bernstein, P. Fay, W. Porod, B. Rakos, A. Zarandy, B. Berland, L. Boloni, G. Boreman, B. Lail, B. Monacelli, and A. Weeks, "Tunable antenna-coupled metal-oxide-metal (MOM) uncooled IR detector," in Proc. SPIE, Infrared Technol. Appl. XXXV, vol. 5783. Bellingham, WA, Jun. 2005, pp. 470-482.
5. J. A. Bean, B. Tiwari, G. H. Bernstein, P. Fay, and W. Porod, "Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes," J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct., vol. 27, no. 1, pp. 11-14, Jan. 2009.
6. B. Tiwari, J. A. Bean, G. Szakmany, G. H. Bernstein, P. Fay, and W. Porod, "Controlled etching and regrowth of tunnel oxide for antennacoupled metal-oxide-metal diodes," J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct., vol. 27, no. 5, pp. 2153-2160, Sep. 2009.
7. S. Y. Wang, T. Izawa, and T. K. Gustafson, "Coupling characteristics of thin-film metal-oxide-metal diodes at 10.6 μm," Appl. Phys. Lett., vol. 27, no. 9, pp. 481-483, Nov. 1975.
8. M. Heiblum, S. Y. Wang, T. K. Gustafson, and J. R. Whinnery, "IIb-7 edge-MOM diode: An integrated, optical, nonlinear device," IEEE Trans. Electron Devices, vol. 24, no. 9, pp. 1199-1199, Sep. 1977.
9. M. Heiblum, W. Shihyuan, J. R. Whinnery, and T. K. Gustafson, "Characteristics of integrated MOM junctions at DC and at optical frequencies," IEEE J. Quantum Electron., vol. 14, no. 3, pp. 159-169, Mar. 1978.
10. C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, "Nanometer thin-film Ni-NiO-Ni diodes for detection and mixing of 30 THz radiation," Infrared Phys. &Technol., vol. 39, no. 3, pp. 123-183, Apr. 1998.
11. C. Fumeaux, G. Boreman, W. Herrmann, H. Rothuizen, and F. Kneubühl, "Polarization response of asymmetric-spiral infrared antennas," Appl. Opt., vol. 36, no. 25, pp. 6485-6490, Sep. 1997.
12. C. Fumeaux, J. Alda, and G. D. Boreman, "Lithographic antennas at visible frequencies," Opt. Lett., vol. 24, no. 22, pp. 1629-1631, Nov. 1999.
13. M. R. Abdel-Rahman, F. González, and G. D. Boreman, "Antennacoupled metal-oxide-metal diodes for dual-band detection at 92.5 GHz and 28 THz," Electron. Lett., vol. 40, no. 2, pp. 116-118, Jan. 2004.
14. I. Wilke, W. Herrmann, and F. K. Kneubühl, "Integrated nanostrip dipole antennas for coherent 30 THz infrared radiation," Appl. Phys. B: Lasers Opt., vol. 58, no. 2, pp. 87-95, Feb. 1994.
15. I. Wilke, Y. Oppliger, W. Herrmann, and F. K. Kneubühl, "Nanometer thin-film Ni-NiO-Ni diodes for 30 THz radiation," Appl. Phys. A: Mater. Sci. Process., vol. 58, no. 4, pp. 329-341, Apr. 1994.
16. M. Abdel-Rahman, B. Monacelli, A. Weeks, G. Zummo, and G. Boreman, "Design, fabrication and characterization of antenna-coupled metal-oxide-metal diodes for dual-band detection," Opt. Eng., vol. 44, no. 6, pp. 066401-1-066401-7, Jun. 2005.
17. J. W. Dees, "Detection and harmonic generation in the sub-millimeter wavelength region," J. Microw., vol. 9, pp. 48-55, Sep. 1966.
18. L. O. Hocker, D. R. Sokoloff, V. Daneu, A. Szoke, and A. Javan, "Frequency mixing in the infrared and far-infrared using a metal-tometal point contact diode," Appl. Phys. Lett., vol. 12, no. 12, pp. 401- 402, Jun. 1968.
19. 2 CW laser at 28 THz (10.6 μm)," App. Phys. Lett., vol. 16, no. 6, pp. 251-253, Mar. 1970.
20. S. I. Green, "Point contact MOM tunneling detector analysis," J. Appl. Phys., vol. 42, no. 3, pp. 1166-1169, Mar. 1971.
21. B. Rakos, H. Yang, J. Bean, G. H. Bernstein, P. Fay, and W. Porod, "Investigation of antenna-coupled MOM diodes for infrared sensor applications," in Proc. 14th Int. Conf. Nonequilibrium Carrier Dynamics Semicond., vol. 110. Dec. 2005, pp. 105-108.
22. S. Faris, T. Gustafson, and J. Wiesner, "Detection of optical and infrared radiation with DC-biased electron-tunneling metal-barrier-metal diodes," IEEE J. Quantum Electron., vol. 9, no. 7, pp. 737-745, Jul. 1973.
23. E. Sakuma and K. M. Evenson, "Characteristics of tungsten-nickel point contact diodes used as laser harmonic-generator mixers," IEEE J. Quantum Electron., vol. 10, no. 8, pp. 599-603, Aug. 1974.
24. A. Sanchez, C. F. Davis, Jr., K. C. Liu, and A. Javan, "The MOM tunneling diode: Theoretical estimate of its performance at microwave and infrared frequencies," J. Appl. Phys., vol. 49, no. 10, pp. 5270-5277, Oct. 1978.
25. J. R. Tucker and M. F. Millea, "Photon detection in nonlinear tunneling devices," Appl. Phys. Lett., vol. 33, no. 7, pp. 611-613, Oct. 1978.
26. A. Thon, M. Merschdorf, W. Pfeiffer, T. Klamroth, P. Saalfrank, and D. Diesing, "Photon-assisted tunneling versus tunneling of excited electrons in metal-insulator-metal junctions," Appl. Phys. A: Mater. Sci. Process., vol. 78, no. 2, pp. 189-199, Jan. 2004.
27. D. Diesing, M. Merschdorf, A. Thon, and W. Pfeiffer, "Identification of multiphoton induced photocurrents in metal-insulator-metal junctions," Appl. Phys. B: Lasers Opt., vol. 78, nos. 3-4, pp. 443-446, Feb. 2004.
28. H. M. Gupta and R. J. Van Overstraeten, "Role of trap states in the insulator region for MIM characteristics," J. Appl. Phys., vol. 46, no. 6, pp. 2675-2682, Jun. 1975.
29. K. Gloos, P. J. Koppinen, and J. P. Pekola, "Properties of native ultrathin aluminium oxide tunnel barriers," J. Phys.: Condens. Matter, vol. 15, no. 10, pp. 1733-1746, Mar. 2003.
30. S. Yngvesson, Microwave Semiconductor Devices. Norwell: Kluwer, 1991, ch. 4.
31. J. G. Simmons, "Electric tunnel effect between dissimilar electrodes separated by a thin insulating film," J. Appl. Phys., vol. 34, no. 9, pp. 2581-2590, Sep. 1963.
32. V. Daneu, D. Sokoloff, A. Sanchez, and A. Javan, "Extension of laser harmonic-frequency mixing techniques into the 9 μm region with an infrared metal-metal point-contact diode," Appl. Phys. Lett., vol. 15, no. 12, pp. 398-401, Dec. 1969.
33. T. K. Gustafson and T. J. Bridges, "Radiation of difference frequencies produced by mixing in metal-barrier-metal diodes," Appl. Phys. Lett., vol. 25, no. 1, pp. 56-59, Jul. 1974.
34. B. Twu and S. E. Schwarz, "Mechanism and properties of point-contact metal-insulator-metal diode detectors at 10.6 μm," Appl. Phys. Lett., vol. 25, no. 10, pp. 595-598, Nov. 1974.
35. D. R. Sokoloff, A. Sanchez, R. M. Osgod, and A. Javan, "Extension of laser harmonic-frequency mixing into the 5-μ regions," Appl. Phys. Lett., vol. 17, no. 6, pp. 257-259, Sep. 1970.
36. T. K. Gustafson, R. V. Schmidt, and J. R. Perucca, "Optical detection in thin-film metal-oxide-metal diodes," Appl. Phys. Lett., vol. 24, no. 12, pp. 620-622, Jun. 1974.
37. H. Momida, T. Hamada, and T. Ohno, "First-principles study of dielectric properties of amorphous high-κ materials," Jpn. J. Appl. Phys., vol. 46, no. 5, pp. 3255-3260, May 2007.
38. G. J. Dolan, "Offset works for lift-off photoprocessing," Appl. Phys. Lett., vol. 31, no. 5, pp. 337-339, Sep. 1977.
39. M. Ohring, The Materials Science of Thin Films. New York: Academic, 1992, pp. 53-55.
40. E. K. Lindmark, J. J. Nowak, and M. T. Kief, "In-situ ellipsometric measurements of thin film aluminum oxidation," in Proc. SPIE, Opt. Metrol. Roadmap Semicond., Opt., Data Storage Ind., vol. 4099. Nov. 2000, pp. 218-227.
41. B. M. Kale, "Electron tunneling devices in optics," Opt. Eng., vol. 24, no. 2, pp. 267-274, 1985.
42. V. Da Costa, F. Bardou, C. Beal, Y. Henry, J. P. Bucher, and K. Ounadjela, "Nanometric cartography of tunnel current in metal-oxide junctions," J. Appl. Phys., vol. 83, no. 11, pp. 6703-6705, Jun. 1998.
43. F. J. González, "Noise measurements in optical detectors," Revista Mexicana de Fisica, vol. 52, no. 6, pp. 550-554, Dec. 2006.
44. J. G. Small, G. M. Elchinger, A. Javan, A. Sanchez, F. J. Bachner, and D. L. Smythe, "AC electron tunneling at infrared frequencies: Thin-film M-O-M diode structure with broad-band characteristics," Appl. Phys. Lett., vol. 24, no. 6, pp. 275-279, Mar. 1974.
45. E. L. Dereniak and G. D. Boreman, Infrared Detectors and Systems. New York: Wiley, 1996, pp. 202-205.
46. C. Fumeaux, G. Boreman, W. Herrmann, F. Kneubühl, and H. Rothuizen, "Spatial impulse response of lithographic infrared antennas," Appl. Opt., vol. 38, no. 1, pp. 37-46, Jan. 1999.
47. B. Slovick, P. Krenz, G. Zummo, and G. Boreman, "Evaporation of uniform antireflection coatings on hemispherical lenses to enhance infrared antenna gain," Infrared Phys. &Technol., vol. 53, no. 2, pp. 89-93, Mar. 2010.