First-principles study of dielectric properties of amorphous high-k materials

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3255-3260

  Momida, Hiroyoshi ^a   Hamada, Tomoyuki ^b,c   Ohno, Takahisa ^a,c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b HITACHI LTD   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Alumina; Amorphous structure; Dielectric property; First principles calculation; Hafnia; Hafnium aluminate

Indexed keywords

ALUMINA; CMOS INTEGRATED CIRCUITS; HAFNIUM COMPOUNDS; LATTICE CONSTANTS; MATHEMATICAL MODELS; PERMITTIVITY;

AMORPHOUS STRUCTURE; FIRST-PRINCIPLES CALCULATION; HAFNIUM ALUMINATE;

AMORPHOUS MATERIALS;

EID: 34547907157     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3255     Document Type: Article

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