The isochronal annealing study on the bias stressed amorphous silicon thin film transistors

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 499-502

  Hwang, Chi Sun ^a   Bae, Byung Seong ^b   Lee, Choochon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DEFECTS; DEGRADATION; GATES (TRANSISTOR); SILICON NITRIDE; SPECTROSCOPY;

ANNEALING PEAKS; BIAS STRESSED HYDROGENATED AMORPHOUS SILICON; CHARGE DETRAPPING; ISOCHRONAL ANNEALING METHOD;

THIN FILM TRANSISTORS;

EID: 0030563359     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00759-8     Document Type: Article

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