SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 4 PART 2, 2009, Pages

Unipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) thin films

(2) Ha, Heonjun a Kim, Ohyun a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; BOTTOM ELECTRODES; COMPLIANCE CURRENT; CURRENT PATHS; CYCLE TESTS; ELECTRIC CHARACTERISTICS; ETHYLENEDIOXYTHIOPHENES; NONVOLATILE MEMORY DEVICES; ON/OFF CURRENT RATIO; PEDOT:PSS; POLY(STYRENE SULFONATE); REDOX BEHAVIOR; RETENTION TIME; THIN OXIDE LAYERS; UNIPOLAR SWITCHING;

NONVOLATILE STORAGE; STYRENE; THIN FILMS;

ALUMINUM;

EID: 77950081652 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C169 Document Type: Article

Times cited : (12)

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