Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials

Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

  Hugger, Peter G ^a   Cohen, J David ^a   Yan, Baojie ^b   Yue, Guozhen ^b   Yang, Jeffrey ^b   Guha, Subhendu ^b  

^a UNIVERSITY OF OREGON   (United States)

^b UNITED SOLAR OVONIC LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; CAPACITANCE PROFILING; COMPOSITIONAL PROPERTIES; CRYSTALLINE VOLUME FRACTION; CRYSTALLINITIES; DEEP DEFECTS; DEFECT STATE; HYDROGEN CONTENTS; IMPURITY LEVEL; NANOCRYSTALLINE FILMS; NANOCRYSTALLINES; OXYGEN IMPURITY; SILICON PHOTOVOLTAIC; STATE DENSITIES; STRONG CORRELATION; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;

DEFECT DENSITY; IMPURITIES; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; OXYGEN; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

DEFECTS;

EID: 78650747071     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3528205     Document Type: Article

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