Defect density and diffusion length of holes in nanocrystalline silicon devices

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Dalal, Vikram L ^a   Sharma, Puneet ^a  

^a IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DIFFUSION LENGTH; ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA DEPOSITION; NANOCRYSTALLINE SILICON DEVICES;

CAPACITANCE; CARRIER CONCENTRATION; DEFECTS; DEPOSITION; DIFFUSION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

SOLAR CELLS;

EID: 18044366932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1873062     Document Type: Article

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