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Volumn 65, Issue 1, 2001, Pages 541-547

Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; OXIDATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS;

EID: 0035198341     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00138-0     Document Type: Article
Times cited : (15)

References (12)
  • 7
    • 0009437857 scopus 로고
    • Electrochemical Society, Pennington, 1981
    • J.R. Patel, Semiconductor Silicon 1981, Electrochemical Society, Pennington, 1981, p. 189.
    • (1981) Semiconductor Silicon , pp. 189
    • Patel, J.R.1
  • 12
    • 0342687003 scopus 로고    scopus 로고
    • Ph.D. Thesis, Utrecht University
    • K.F. Feenstra, Ph.D. Thesis, Utrecht University, 1998.
    • (1998)
    • Feenstra, K.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.