Theoretical characterization of a nanocrystal layer for nonvolatile memory applications

Materials Research Society Symposium Proceedings

Volumn 1250, Issue , 2010, Pages 29-34

  Leroy, Yann ^a   Armeanu, Dumitru ^a   Cordan, Anne Sophie ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; FLASH MEMORY; GEOMETRY; HAFNIUM OXIDES; PERMITTIVITY; REFRACTORY METAL COMPOUNDS; SILICA;

CHARGING/DISCHARGING; DIELECTRIC PERMITTIVITIES; ELEMENTARY STRUCTURE; NANOCRYSTAL FLASH MEMORY; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE FLASH MEMORY; SINGLE NANOCRYSTALS; STATISTICAL APPROACH;

NANOCRYSTALS;

EID: 78650349737     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1250-g01-04     Document Type: Conference Paper

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