3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 148-150

  Thean, A ^b   Leburton, J P ^a,b  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Computer modeling; Flash memory; Silicon nanocrystal; Single electron charging

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRONS; FLASH MEMORY; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; THREE DIMENSIONAL;

CAPACITANCE VOLTAGE CHARACTERISTICS; SCHRODINGER EQUATIONS; SINGLE ELECTRON CHARGING;

MOS DEVICES;

EID: 0035280102     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910625     Document Type: Article

References (15)

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