Charging simulations in nanocrystal quantum flash memories

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2354-2357

  Leroy, Y ^a   Cordan, A S ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Charging time; Layer model; Nanocrystal memories; Predictive simulations; Statistics

Indexed keywords

DATA STORAGE EQUIPMENT; FINITE ELEMENT METHOD; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SEMICONDUCTOR STORAGE; THREE DIMENSIONAL;

CHARGING TIME; DIMENSIONAL ARRAYS; DOPING DENSITIES; FLOATING GATES; GEOMETRICAL PARAMETERS; LAYER MODEL; NANOCRYSTAL MEMORIES; OPTIMAL OPERATING CONDITIONS; PREDICTIVE SIMULATIONS; SEMICONDUCTOR TRANSISTORS; STATISTICAL STUDIES; SUB BANDS; THREE-DIMENSIONAL MODELS; TUNNELING TIMES;

FLASH MEMORY;

EID: 56649085102     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.08.016     Document Type: Article

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