Dose enhancement and reduction in SiO2 and high-κ MOS insulators

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3463-3469

  Dasgupta, Aritra ^a   Fleetwood, Daniel M ^a   Reed, Robert A ^a   Weller, Robert A ^a   Mendenhall, Marcus H ^a   Sierawski, Brian D ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Dose enhancement; HfO2; high ; Monte Carlo radiative energy deposition (MRED); MOS capacitors; SiO2

Indexed keywords

BREMSSTRAHLUNG X-RAYS; DISCRETE ORDINATES; DOSE ENHANCEMENT; DOSE REDUCTION; GATE METALLIZATION; HFO2; HIGH-Z MATERIAL; MICROELECTRONIC MATERIALS; MONTE CARLO; MONTE CARLO SIMULATORS; SIO2; X-RAY FLUENCE;

CAPACITORS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MICROELECTRONICS; MONTE CARLO METHODS; MOS CAPACITORS; SILICON COMPOUNDS; X RAYS;

GATE DIELECTRICS;

EID: 78650337551     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2079950     Document Type: Conference Paper

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