Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1586-1597

  Unuma, Takeya ^a   Yoshita, Masahiro ^a   Noda, Takeshi ^b   Sakaki, Hiroyuki ^b   Akiyama, Hidefumi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; ELECTROMAGNETIC WAVE SCATTERING; IMPURITIES; INTERFACES (MATERIALS); PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

LINEWIDTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037322224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1535733     Document Type: Article

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