Planarization of GaN by the etch-back method

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 363-368

  Williams, Adrian D ^a   Moustakas, Theodore D ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL INERTNESS; ETCH-BACK TECHNIQUE; HYDRIDE VAPOR PHASE EPITAXY (HVPE); PLANARIZATION;

CHEMICAL MECHANICAL POLISHING; CRYSTAL ORIENTATION; FILM GROWTH; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33646423028     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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