Micromechanical based constitutive relations for modeling the bulk growth of single crystal InP

Journal of Crystal Growth

Volumn 233, Issue 4, 2001, Pages 645-659

  Kalan, Robert J ^a   Maniatty, Antoinette M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

A1. computer simulation; A1. line defects; A1. stresses; B2. semiconducting indium phosphide

Indexed keywords

COMPRESSION TESTING; COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SINGLE CRYSTALS; STRAIN HARDENING;

MICROMECHANICAL MODELS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035546560     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01624-4     Document Type: Article

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