Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 43-52

  Senkader, S ^a   Giannattasio, A ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

Czochralski; Diffusivity; Dislocations; Oxygen; Silicon; Warpage

Indexed keywords

ANNEALING; BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; MELTING; NUCLEATION; NUMERICAL METHODS; OXYGEN; PLASTIC DEFORMATION; POINT DEFECTS; SILICON; STACKING FAULTS; STRENGTH OF MATERIALS; STRESSES; SUPERSATURATION; THERMAL EFFECTS;

DIFFUSIVITY; DISLOCATION LOCKING; WARPAGE;

DISLOCATIONS (CRYSTALS);

EID: 1642516030     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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