On the dislocation-oxygen interactions in Czochralski-grown Si: Oxygen diffusion and binding at low temperatures

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13141-13145

  Senkader, S ^a   Giannattasio, A ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CRYSTAL GROWTH FROM MELT; DIFFUSION; DISLOCATIONS (CRYSTALS); ENTHALPY; OXYGEN; TEMPERATURE;

BINDING ENTHALPY; DISLOCATION OXYGEN INTERACTIONS; OXYGEN DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0037122070     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/361     Document Type: Article

References (9)

1. Hu S M and Patrick W J 1975 J. Appl. Phys. 46 1869
2. Sumino K 1994 Handbook on Semiconductors vol 3, ed S Mahayan (Amsterdam: Elsevier) 73
3. Sumino K and Imai M 1983 Phil. Mag. A 47 753
4. Sumino K and Yonenaga I 1994 Semiconductors and Semimetals vol 42 ed F Shimura (New York: Academic) p 449
5. Senkader S, Jurkschat K, Gambaro D, Falster R J and Wilshaw P R 2001 Phil. Mag. A 81 759
6. Senkader S, Wilshaw P R and Falster R J 2001 J. Appl. Phys. 89 4803
7. Newman R C and Jones R 1994 Semiconductors and Semimetals vol 42, ed F Shimura (New York: Academic) p 289
8. Jones R (ed) 1996 Early Stages of Oxygen Precipitation (NATO ASI Series 3: High Technology) (Dordrecht: Kluwer Academic)
9. Mikkelsen J C Jr 1986 Mater. Res. Soc. Symp. Proc. 59 19