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Volumn , Issue 36, 2010, Pages 5629-5634

Atmospheric pressure chemical vapour deposition of TiCl4 and tBuAsH2 to form titanium arsenide thin films

Author keywords

Arsenic; Chemical vapour deposition; Thin films; Titanium

Indexed keywords

ARSENIC COMPOUNDS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; DEPOSITION RATES; METAL SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY POWDER DIFFRACTION;

EID: 78650160607     PISSN: 14341948     EISSN: 10990682     Source Type: Journal    
DOI: 10.1002/ejic.201000839     Document Type: Article
Times cited : (15)

References (40)
  • 36
    • 85163223658 scopus 로고    scopus 로고
    • in:, in: Chemical Vapour Deposition Precursors, Processes and Applications (Eds.:, A. C. Jones, M. L. Hitchman), Royal Society of Chemistry, Cambridge, UK
    • R. A. Fischer, H. Parala, in: Metal-organic Chemical Vapour Deposition of Refractory Transition Metal Nitrides, in: Chemical Vapour Deposition Precursors, Processes and Applications (Eds.:, A. C. Jones, M. L. Hitchman), Royal Society of Chemistry, Cambridge, UK, 2009.
    • (2009) Metal-organic Chemical Vapour Deposition of Refractory Transition Metal Nitrides
    • Fischer, R.A.1    Parala, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.