Room-temperature fabrication of highly transparent conductive aluminum-doped zinc oxide films

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 2413-2417

  Chen, C H ^a   Chen, Y C ^a   Hong, S F ^a   Wang, C L ^a   Shih, W C ^a   Tsai, C P ^a   Wu, Y C ^a   Lai, C H ^a   Wei, C N ^b   Bor, H Y ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; FABRICATION PROCESS; HIGH QUALITY; ORDER OF MAGNITUDE; POLYMER SUBSTRATE; POST ANNEALING; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RELATIVE POSITIONS; ROOM TEMPERATURE; SPUTTERING PARAMETERS; SUBSTRATE HEATING; TEMPERATURE-SENSITIVE POLYMERS; THERMAL DEGRADATIONS; TRANSPARENT CONDUCTIVE; VISIBLE LIGHT REGION; WORKING PRESSURES; ZNO; ZNO:AL FILMS;

ALUMINUM; ALUMINUM COATINGS; CONDUCTIVE FILMS; FABRICATION; FLEXIBLE ELECTRONICS; METALLIC FILMS; PHOTOVOLTAIC EFFECTS; POLYMER FILMS; SUBSTRATES; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 78650142825     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614247     Document Type: Conference Paper

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