Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 885-890

  Schmidt, Jan ^a   Veith, Boris ^a   Werner, Florian ^a   Zielke, Dimitri ^a   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BELT-FURNACES; CAPPING LAYER; HIGHER EFFICIENCY; P-TYPE SILICON WAFERS; SILICON SURFACES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; THERMAL ALD; THERMAL STABILITY; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; BELT CONVEYORS; PASSIVATION; PHOTOVOLTAIC EFFECTS; PLASMA DEPOSITION; PLASMAS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS; THERMODYNAMIC STABILITY;

ALUMINUM;

EID: 78650136492     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614132     Document Type: Conference Paper

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