Practical challenges of achieving high efficiency boron back surface field solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 906-912

  Das, A ^a   Ramanathan, S ^a   Upadhyaya, A ^a   Meemongkolkiat, V ^a,b   Rohatgi, A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SURFACE FIELDS; BORON DIFFUSED; BORON DIFFUSIONS; BORON-DOPED; BULK LIFETIME; CRYSTALLINE SILICON SOLAR CELLS; GETTERING; HIGH EFFICIENCY; IRON CONTAMINATION; SPIN-ON; SURFACE LAYERS; THERMAL PROCESS;

PASSIVATION; PHOTOVOLTAIC EFFECTS; POTASSIUM HYDROXIDE; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SOLAR CELLS; SURFACES;

BORON;

EID: 78650133570     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614151     Document Type: Conference Paper

References (32)

1. th International PVSEC, 2009.
2. th IEEE PVSC, June 2009.
3. J. Zhao et al., Prog. Photovolt: Res. Appl. 7, 1999, pp. 471-474.
4. rd WCPEC, 2003.
5. A. Das and A. Rohatgi, J. Electrochem. Soc. 157, 2009, H684.
6. R. Sinton and A. Cuevas, APL, 69, 1996, p. 2510.
7. D. H. Macdonald et al., JAP 95, 2004, p. 1021.
8. S. Rein and S.W. Glunz, JAP 98, 2005, 113711.
9. J. E. Birkholz et al., JAP 97, 2005, 103708.
10. D. H. Macdonald et al., APL 89, 2006, 142107.
11. P. A. Basore, IEEE Trans. Electron Devices 37, 1990, pp. 337-343.
12. Y. J. Lee and S.H. Lee, J. Korean Phys. Soc. 44, 2004, p. 1581.
13. A. Wang et al., APL 57, 1990, p. 602.
14. R. Meyer et al., 21st E-PVSEC, 2006, p. 713.
15. N. Ohe et al., Solar Energy Mater. Sol. Cells, 48, 1997, pp.145-150.
16. A. A. Istratov, H. Hieslmair and E. R.Weber, Appl. Phys. A, 69, 1999, pp. 13-44.
17. H. Shimizu and C. Munakata, Jpn. J. Appl. Phys., 31, 1992, pp.729-731.
18. H. Shimizu, J. Electrochem. Soc., 144, 1997, pp.4335-4330.
19. R. S. Johnson, J. Vac. Sci. Technol. A 19, 2001, pp.1353-1360.
20. A. A. Istratov, H. Hieslmair and E. R.Weber, Appl. Phys. A, 70, 2000, pp. 489-534.
21. th E-PVSEC, 2005, p. 1458.
22. st IEEE PVSC, 1990, p. 229-234.
23. K. R. McIntosh and L. P. Johnson, JAP 105, 2009, 124520.
24. S. L. Elliot et al., JAP, 69, 2002, p. 9116-9122.
25. A. Das et al., IEEE Trans. Elec. Dev, 2010 (in press).
26. th E-PVSEC, 1997, pp. 2416-2419.
27. nd EUPVSEC (2007).
28. st IEEE PVSC, 1990, pp.227-232.
29. R. R. King and R.M. Swanson, IEEE Trans. Elec. Dev., 38, 1991, pp. 1399-1409.
30. st E-PVSEC, 2006, pp. 647-650.
31. nd E-PVSEC, 2007, pp. 310-312.
32. rd WCPEC, 2003, pp. 923.