Effect of boron gettering on minority-carrier quality for FZ and CZ Si substrates

Solar Energy Materials and Solar Cells

Volumn 48, Issue 1-4, 1997, Pages 145-150

  Ohe, N ^a   Tsutsui, K ^b   Warabisako, T ^b   Saitoh, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Boron gettering; Minority carrier quality; Si substrates

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; PASSIVATION; SEMICONDUCTING BORON; SUBSTRATES;

BORON GETTERING; MINORITY CARRIER QUALITY;

SILICON SOLAR CELLS;

EID: 0031271905     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00086-X     Document Type: Article

References (6)

1. J. Zhao, A. Wang, P. Altermatt, M.A. Green, Appl. Phys. Lett. 66 (26) (1995) 3636.
2. J. Knobloch, A. Noel, E. Schäffer, U. Schbert, F.J. Kamerewerd, S. Klußmann, W. Wettling, Proc. 23rd IEEE Photovoltaic Specialists Conf., 1993 p. 271.
3. T. Uematsu, S. Muramatsu, K. Tsutsui, H. Ohtsuka, Y. Nagata, M. Sakamoto, T. Warabisako, Tech. Digest of the 9th Int. Photovoltaic Science and Engineering Conf. 1996, p. 73.
4. T.S. Horáyi, T. Pavelka, P. Tüttö, Appl. Surf. Sci. 63 (1993) 306.
5. T.Y. Tan, U. Gösele, Appl. Phys. A 37 (1985) 1.
6. S.D. Brotherton, P. Bradley, A. Gill, J. Appl. Phys. 57 (1985) 1941.