Design of RF properties for vertical nanowire MOSFETs

IEEE Transactions on Nanotechnology

Volumn 10, Issue 4, 2011, Pages 668-673

  Lind, Erik ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

Field effect transistors; InAs; metal oxide semiconductor field effect transistor (MOSFET); modeling; nanowire; parasitic capacitance

Indexed keywords

3-D FINITE ELEMENT METHOD; INAS; INTRINSIC GATE CAPACITANCE; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NANOWIRE MOSFETS; PARASITIC CAPACITANCE; RF PERFORMANCE;

CAPACITANCE; DIELECTRIC DEVICES; FINITE ELEMENT METHOD; INDIUM ARSENIDE; MOSFET DEVICES; NANOWIRES; WIRE;

TRANSISTORS;

EID: 78649995472     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2064783     Document Type: Article

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