Submicron transferred-substrate heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 396-398

  Lee, Q ^a   Martin, S C ^b   Mensa, D ^a   Smith, R P ^b   Guthrie, J ^a   Rodwell, M J W ^a  

^a University of California   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC SPACE CHARGE; EXTRAPOLATION; GAIN CONTROL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

SCHOTTKY COLLECTOR CONTACTS; SUBMICRON TRANSFERRED-SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032626929     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778155     Document Type: Article

References (8)

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