InAs/GaInP self-assembled quantum dots: Molecular beam epitaxial growth and optical properties

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1089-1094

  Amanai, H ^a   Nagao, S ^a   Sakaki, H ^b  

^a MITSUBISHI CHEMICAL CORPORATION   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III V materials; B2. Semiconducting indium compounds; B2. Semiconducting indium gallium phosphide

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY GAP; MOLECULAR BEAM EPITAXY; MONOLAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

INTERMIXING; THERMIONIC ESCAPE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398838     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00994-0     Document Type: Conference Paper

References (8)