One-dimensional InAs quantum-dot chains grown on strain-controlled GaAs/InGaAs buffer layer by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 9 A/B, 2002, Pages

  Yamaguchi, Koichi ^a   Kawaguchi, Kazuhisa ^a   Kanto, Toru ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

GaAs; InAs; InGaAs; Misfit dislocation; Molecular beam epitaxy; Quantum dot chain; Strain control

Indexed keywords

GROWTH (MATERIALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

HETEROINTERFACES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037107094     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l996     Document Type: Article

References (13)

1. Y. Arakawa and H. Sakaki: Appl. Phys. Lett. 40 (1982) 939.
2. J.J. Finely, M. Skalitz, M. Arzberger, A. Zrenner, G. Bohm and G. Abstreiter: Appl. Phys. Lett. 73 (1998) 2678.
3. D. Leonard, K. Pond and P.M. Petroff: Phys. Rev. B 50 (1994) 11687.
4. K. Yamaguchi, K. Yujobo and T. Kaizu: Jpn. J. Appl. Phys. 39 (2000) L1245.
5. T. Kaizu and K. Yamaguchi: Jpn. J. Appl. Phys. 40 (2001) 1885.
6. J. Tersoff, C. Teichert and M.G. Lagally: Phys. Rev. Lett. 76 (1996) 1675.
7. K. Yamaguchi, E. Waki and H. Hasegawa: Jpn. J. Appl. Phys. 36 (1997) L871.
8. F. Hiwatashi and K. Yamaguchi: Appl. Surf. Sci. 130/132 (1998) 737.
9. K. Yamaguchi, T. Hiraike and K. Kawaguchi: Appl. Surf. Sci. 162/163 (2000) 590.
10. K. Hausler, K. Eberl, F. Noll and A. Trampert: Phys. Rev. B 54 (1996) 4913.
11. Y.H. Xie, S.B. Samavedam, M. Bulsara, T.A. Langdo and E.A. Fitzgerald: Appl. Phys. Lett. 71 (1997) 3567.
12. J.W. Matthews and A.E. Blakeslee: J. Cryst. Growth 27 (1974) 118.
13. K.L. Kavanagh, M.A. Capano, L.W. Hobbs, J.C. Barbour, P.M.J. Maree, W. Schaff, J.W. Mayer, D. Pettit, J.M. Woodall, J.A. Stroscio and R.M. Feenstra: J. Appl. Phys. 64 (1988) 4843.